Inner-Gate-Engineered GAA MOSFET to Enhance the Electrostatic Integrity, Nano, DOI: 10.1142/s501285 5 Days International Faculty Development Program (online).
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- Feb 11, 2020 The gate-all-around (GAA) silicon nanosheet (SiNS) metal-oxide-semiconductor field-effect transistor (MOSFET) structures have been recognized as excellent candidates to achieve improved power performance and area scaling compared to the current FinFET technologies.
- In the lab, several entities are working on nanowire gate-all-around FET. For example, IBM recently described a gate-all-around silicon nanowire FET, which achieved a nanowire pitch of 30nm and a scaled gate pitch of 60nm. The device had an effective nanowire dimension of 12.8nm.
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